2N6660JTXV02 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
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Technische Details 2N6660JTXV02 Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD, Qualification: MIL-PRF-19500, Grade: Military, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-205AD (TO-39), Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 725mW (Ta), 6.25W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 990mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Tube.