| Anzahl | Privatkunde |
|---|---|
| 2725+ | 0.24 EUR |
| 10000+ | 0.21 EUR |
Artikel auf Bestellung
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Lieferzeit:
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Mindestmenge:
2725 Stücke
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Technische Details 2N7000_D75Z FAIRCHILD
Description: MOSFET N-CH 60V 200MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote 2N7000_D75Z nach Preis ab 0.24 EUR bis 1.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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2N7000-D75Z | onsemi |
 Description: MOSFET N-CH 60V 200MA TO92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7000-D75Z | ON Semiconductor |
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7000-D75Z | onsemi |
MOSFETs N-CHANNEL 60V 200mA |
auf Bestellung 3102 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7000-D75Z | onsemi |
Description: MOSFET N-CH 60V 200MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7000-D75Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Technology: DMOS Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1807 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7000-D75Z |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.25 EUR |
| 4000+ | 0.24 EUR |
| 2N7000-D75Z |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.3 EUR |
| 4000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
| 2N7000-D75Z |
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Hersteller: onsemi
MOSFETs N-CHANNEL 60V 200mA
MOSFETs N-CHANNEL 60V 200mA
auf Bestellung 3102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 2000+ | 0.25 EUR |
| 2N7000-D75Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 29+ | 0.73 EUR |
| 50+ | 0.52 EUR |
| 100+ | 0.46 EUR |
| 2N7000-D75Z |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1807 Stücke:
Lieferzeit 14-21 Tag (e)