auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.36 EUR |
| 100+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.093 EUR |
| 6000+ | 0.084 EUR |
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Technische Details 2N7002BKSH Nexperia
Description: MOSFET 2N-CH 60V 0.3A 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 295mW (Ta), 1.04W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002BKSH nach Preis ab 0.13 EUR bis 0.53 EUR
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2N7002BKSH | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 60V 0.3A 6TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW (Ta), 1.04W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2372 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002BKSH | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 0.3A 6-Pin TSSOP T/R |
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2N7002BKSH | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.3A 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW (Ta), 1.04W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |