2N7002BKSH Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 60V 0.3A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 295mW (Ta), 1.04W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 47+ | 0.38 EUR |
| 108+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
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Technische Details 2N7002BKSH Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.3A 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 295mW (Ta), 1.04W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 6-TSSOP, Grade: Automotive, Qualification: AEC-Q101.
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2N7002BKSH | Hersteller : Nexperia |
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2N7002BKSH | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.3A 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW (Ta), 1.04W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
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