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2N7002DWK-7

2N7002DWK-7 Diodes Zetex

2n7002dwk.pdf Hersteller: Diodes Zetex
Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6000+0.051 EUR
Mindestbestellmenge: 6000
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Technische Details 2N7002DWK-7 Diodes Zetex

Description: MOSFET 2N-CH 60V 0.261A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 261mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.

Weitere Produktangebote 2N7002DWK-7 nach Preis ab 0.069 EUR bis 0.57 EUR

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Preis ohne MwSt
2N7002DWK-7 2N7002DWK-7 Hersteller : Diodes Incorporated 2N7002DWK.pdf Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.095 EUR
6000+ 0.088 EUR
9000+ 0.073 EUR
30000+ 0.072 EUR
Mindestbestellmenge: 3000
2N7002DWK-7 2N7002DWK-7 Hersteller : Diodes Incorporated 2N7002DWK.pdf Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 32889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
2N7002DWK-7 Hersteller : Diodes Incorporated DIOD_S_A0011803061_1-2543643.pdf MOSFET 2N7002 Family SOT363 T&R 3K
auf Bestellung 2452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.57 EUR
10+ 0.39 EUR
100+ 0.25 EUR
1000+ 0.11 EUR
3000+ 0.095 EUR
9000+ 0.072 EUR
24000+ 0.069 EUR
Mindestbestellmenge: 5
2N7002DWK-7 Hersteller : Diodes Inc 2n7002dwk.pdf 2N7002 Family SOT363 T&R 3K
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