auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6000+ | 0.047 EUR |
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Technische Details 2N7002DWK-7 Diodes Zetex
Description: MOSFET 2N-CH 60V 0.261A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 261mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote 2N7002DWK-7 nach Preis ab 0.074 EUR bis 0.33 EUR
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2N7002DWK-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 0.261A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 2536 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002DWK-7 | Hersteller : Diodes Incorporated |
MOSFETs 2N7002 Family SOT363 T&R 3K |
auf Bestellung 4283 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002DWK-7 | Hersteller : Diodes Inc |
2N7002 Family SOT363 T&R 3K |
Produkt ist nicht verfügbar |
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| 2N7002DWK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 261mA Power dissipation: 0.45W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.04nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1.1A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2N7002DWK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.261A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
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| 2N7002DWK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 261mA Power dissipation: 0.45W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 1.04nC Kind of package: 7 inch reel; tape Kind of channel: enhancement Pulsed drain current: 1.1A |
Produkt ist nicht verfügbar |