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2N7002DWK-7

2N7002DWK-7 Diodes Zetex


2n7002dwk.pdf Hersteller: Diodes Zetex
Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 39000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.05 EUR
Mindestbestellmenge: 6000
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Technische Details 2N7002DWK-7 Diodes Zetex

Description: MOSFET 2N-CH 60V 0.261A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 261mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.

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2N7002DWK-7 2N7002DWK-7 Hersteller : Diodes Incorporated 2N7002DWK.pdf Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
2N7002DWK-7 2N7002DWK-7 Hersteller : Diodes Incorporated 2N7002DWK.pdf Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 5538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
86+0.21 EUR
123+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 56
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2N7002DWK-7 Hersteller : Diodes Incorporated DIOD_S_A0011803061_1-2543643.pdf MOSFETs 2N7002 Family SOT363 T&R 3K
auf Bestellung 4283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.33 EUR
13+0.22 EUR
100+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
6000+0.07 EUR
Mindestbestellmenge: 9
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2N7002DWK-7 Hersteller : Diodes Inc 2n7002dwk.pdf 2N7002 Family SOT363 T&R 3K
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2N7002DWK-7 Hersteller : DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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2N7002DWK-7 Hersteller : DIODES INCORPORATED 2N7002DWK.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 261mA; Idm: 1.1A; 450mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 261mA
Power dissipation: 0.45W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 1.04nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH