| Anzahl | Preis |
|---|---|
| 7+ | 0.45 EUR |
| 11+ | 0.27 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.092 EUR |
| 6000+ | 0.081 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N7002DWK-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.261A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 330mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 261mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote 2N7002DWK-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
2N7002DWK-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 0.261A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 330mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002DWK-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 60V 0.261A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 330mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)