Produkte > DIODES INCORPORATED > 2N7002DWS-7
2N7002DWS-7

2N7002DWS-7 Diodes Incorporated

2N7002DWS.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.14 EUR
6000+ 0.13 EUR
9000+ 0.11 EUR
75000+ 0.091 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details 2N7002DWS-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.247A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 290mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 247mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363.

Weitere Produktangebote 2N7002DWS-7 nach Preis ab 0.083 EUR bis 0.74 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2N7002DWS-7 2N7002DWS-7 Hersteller : Diodes Incorporated 2N7002DWS.pdf Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
34+ 0.53 EUR
100+ 0.27 EUR
500+ 0.22 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 24
2N7002DWS-7 Hersteller : Diodes Zetex 2N7002DWS.pdf DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
auf Bestellung 117000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.083 EUR
Mindestbestellmenge: 3000
2N7002DWS-7 Hersteller : Diodes Inc 2n7002dws.pdf DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Produkt ist nicht verfügbar
2N7002DWS-7 2N7002DWS-7 Hersteller : Diodes Incorporated DIOD_S_A0009691393_1-2543308.pdf MOSFET MOSFET BVDSS: 31V-40V
Produkt ist nicht verfügbar