2N7002DWS-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 141000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.10 EUR |
| 9000+ | 0.09 EUR |
| 15000+ | 0.09 EUR |
| 75000+ | 0.09 EUR |
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Technische Details 2N7002DWS-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.247A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 290mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 247mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote 2N7002DWS-7 nach Preis ab 0.08 EUR bis 0.63 EUR
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2N7002DWS-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
auf Bestellung 2501 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002DWS-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.247A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 247mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 141000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002DWS-7 | Hersteller : Diodes Zetex |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002DWS-7 | Hersteller : Diodes Inc |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
Produkt ist nicht verfügbar |
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| 2N7002DWS-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 247mA Pulsed drain current: 1.8A Power dissipation: 0.37W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 0.4nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| 2N7002DWS-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 247mA Pulsed drain current: 1.8A Power dissipation: 0.37W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 0.4nC |
Produkt ist nicht verfügbar |