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2N7002DWS-7

2N7002DWS-7 Diodes Incorporated

2N7002DWS.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.099 EUR
9000+0.097 EUR
21000+0.094 EUR
30000+0.09 EUR
75000+0.089 EUR
Mindestbestellmenge: 3000
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Technische Details 2N7002DWS-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.247A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 290mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 247mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363.

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2N7002DWS-7 2N7002DWS-7 Hersteller : Diodes Incorporated 2N7002DWS.pdf Description: MOSFET 2N-CH 60V 0.247A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 247mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 132000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
49+0.36 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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2N7002DWS-7 2N7002DWS-7 Hersteller : Diodes Incorporated 2N7002DWS.pdf MOSFETs MOSFET BVDSS: 31V-40V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.59 EUR
10+0.36 EUR
100+0.2 EUR
500+0.16 EUR
1000+0.15 EUR
3000+0.1 EUR
6000+0.093 EUR
Mindestbestellmenge: 5
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2N7002DWS-7 Hersteller : Diodes Zetex 2N7002DWS.pdf DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
auf Bestellung 129000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.086 EUR
Mindestbestellmenge: 3000
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2N7002DWS-7 Hersteller : Diodes Inc 2n7002dws.pdf DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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2N7002DWS-7 Hersteller : DIODES INCORPORATED 2N7002DWS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 247mA; Idm: 1.8A; 370mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 247mA
Power dissipation: 0.37W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.4nC
Pulsed drain current: 1.8A
Produkt ist nicht verfügbar
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