Weitere Produktangebote 2N7002E-T1-GE3 nach Preis ab 0.12 EUR bis 1.11 EUR
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2N7002E-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 2731 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V |
auf Bestellung 167667 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA TO236 Part Status: Active Supplier Device Package: TO-236 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 5324 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002E-T1-GE3 | Hersteller : LRC |
N-кан. MOSFET 60V 240MA SOT23 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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2N7002E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA TO236 Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-236 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V |
Produkt ist nicht verfügbar |