auf Bestellung 69000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 45000+ | 0.11 EUR |
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Technische Details 2N7002E-T1-GE3 Vishay
Description: MOSFET N-CH 60V 240MA TO236, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 240mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V.
Weitere Produktangebote 2N7002E-T1-GE3 nach Preis ab 0.11 EUR bis 1.11 EUR
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2N7002E-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 0.22W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2870 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 0.22W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.3A |
auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V |
auf Bestellung 174019 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 2660 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V |
auf Bestellung 5324 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E-T1-GE3 Produktcode: 167495
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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2N7002E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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2N7002E-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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2N7002E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA TO236 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V |
Produkt ist nicht verfügbar |