Weitere Produktangebote 2N7002E-T1-GE3 nach Preis ab 0.2 EUR bis 1.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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2N7002E-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Vishay |
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA TO236Part Status: Active Supplier Device Package: TO-236 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 240mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E-T1-GE3 | Vishay Semiconductors |
MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V |
auf Bestellung 161483 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002E-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 0.74 EUR |
| 254+ | 0.68 EUR |
| 532+ | 0.32 EUR |
| 1000+ | 0.24 EUR |
| 2N7002E-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 147+ | 1.2 EUR |
| 240+ | 0.7 EUR |
| 254+ | 0.64 EUR |
| 532+ | 0.3 EUR |
| 1000+ | 0.21 EUR |
| 2N7002E-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 60V 240MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 2N7002E-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V
MOSFETs 60V 240mA 0.35W 3.0ohm @ 10V
auf Bestellung 161483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.24 EUR |
| 6000+ | 0.2 EUR |




