Technische Details 2N7002E NXP
Description: MOSFET N-CH 60V 300MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Weitere Produktangebote 2N7002E
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2N7002E | Hersteller : SILICONIX |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N7002E | Hersteller : Vishay | Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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2N7002E | Hersteller : Panasonic Electronic Components |
Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |
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2N7002E | Hersteller : Panasonic Electronic Components |
Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |
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2N7002E | Hersteller : Diodes Incorporated | MOSFET |
Produkt ist nicht verfügbar |
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2N7002E | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT 781-2N7002E-T1-E3 |
Produkt ist nicht verfügbar |
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2N7002E | Hersteller : Panasonic | MOSFET Nch MOSFET 60V 0.3A RDS(on)=3ohms SOT-23 |
Produkt ist nicht verfügbar |
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2N7002E | Hersteller : onsemi | MOSFET NFET SOT23 60V 115MA 7MO |
Produkt ist nicht verfügbar |