2N7002E Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 300MA 3@10V,500MA 225MW N CH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.038 EUR |
| 6000+ | 0.033 EUR |
| 9000+ | 0.031 EUR |
| 15000+ | 0.029 EUR |
| 21000+ | 0.027 EUR |
| 30000+ | 0.026 EUR |
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Technische Details 2N7002E Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 300MA 3@10V,500MA 225MW N CH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 225mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V.
Weitere Produktangebote 2N7002E nach Preis ab 0.046 EUR bis 1.3 EUR
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2N7002E | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 300MA 3@10V,500MA 225MW N CH Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 2678 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E | Analog Power Inc. |
Description: MOSFET N-CH 60V 1.4A SOT-23 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002E | SILICONIX |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002E |
|
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 300MA 3@10V,500MA 225MW N CH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Description: 60V 300MA 3@10V,500MA 225MW N CH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 2678 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.19 EUR |
| 173+ | 0.12 EUR |
| 281+ | 0.075 EUR |
| 500+ | 0.054 EUR |
| 1000+ | 0.046 EUR |
| 2N7002E |
|
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 60V 1.4A SOT-23
Description: MOSFET N-CH 60V 1.4A SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 22+ | 0.98 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.3 EUR |
| 2N7002E |
|
Hersteller: SILICONIX
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)