2N7002ET7G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 60V 260MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
auf Bestellung 66500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3500+ | 0.057 EUR |
| 10500+ | 0.055 EUR |
| 24500+ | 0.054 EUR |
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Technische Details 2N7002ET7G onsemi
Description: MOSFET N-CH 60V 260MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V, Power Dissipation (Max): 300mW (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V.
Weitere Produktangebote 2N7002ET7G nach Preis ab 0.032 EUR bis 0.6 EUR
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2N7002ET7G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2220 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002ET7G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2220 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET7G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V |
auf Bestellung 71628 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002ET7G | Hersteller : onsemi |
MOSFET Small Signal MOSFET 60V 310mA 2.5 Ohm Single N-Channel SOT-23 |
auf Bestellung 462659 Stücke: Lieferzeit 14-28 Tag (e) |
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| 2N7002ET7G | Hersteller : ONS |
Транз. Пол. ММ N-FET ПТ SOT23 Vds=60V, Id=0.18A, Rds=5Ohm, Vgs=3V, P=0.25W, smd. |
auf Bestellung 3633 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET7G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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2N7002ET7G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |