2N7002EY ANBON SEMICONDUCTOR (INT'L) LIMITED
Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.049 EUR |
| 6000+ | 0.044 EUR |
| 9000+ | 0.04 EUR |
| 15000+ | 0.038 EUR |
| 21000+ | 0.036 EUR |
| 30000+ | 0.033 EUR |
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Technische Details 2N7002EY ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT, Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2N7002EY nach Preis ab 0.095 EUR bis 0.25 EUR
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2N7002EY | ANBON SEMICONDUCTOR (INT'L) LIMITED |
Description: N-CHANNEL SMD MOSFET ESD PROTECT Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 227 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002EY |
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Hersteller: ANBON SEMICONDUCTOR (INT'L) LIMITED
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: N-CHANNEL SMD MOSFET ESD PROTECT
Input Capacitance (Ciss) (Max) @ Vds: 18 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 0.25 EUR |
| 134+ | 0.15 EUR |
| 220+ | 0.095 EUR |