2N7002K-AU_R1_000A2 Panjit
| Anzahl | Privatkunde |
|---|---|
| 12+ | 0.27 EUR |
| 25+ | 0.12 EUR |
| 100+ | 0.1 EUR |
| 500+ | 0.075 EUR |
| 1000+ | 0.069 EUR |
| 3000+ | 0.052 EUR |
| 6000+ | 0.05 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
12 Stücke
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Produktbewertung abgeben
Technische Details 2N7002K-AU_R1_000A2 Panjit
Description: 60V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002K-AU_R1_000A2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
2N7002K-AU_R1_000A2 | PanJit |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 0.8nC Application: automotive industry |
auf Bestellung 8899 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002K-AU_R1_000A2 |
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Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.8nC
Application: automotive industry
auf Bestellung 8899 Stücke:
Lieferzeit 14-21 Tag (e)



