auf Bestellung 102000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.08 EUR |
| 54000+ | 0.07 EUR |
| 81000+ | 0.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2N7002K-T1-E3 Vishay
Description: MOSFET N-CH 60V 300MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V.
Weitere Produktangebote 2N7002K-T1-E3 nach Preis ab 0.08 EUR bis 0.58 EUR
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2N7002K-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
auf Bestellung 332176 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002K-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002K-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002K-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R |
auf Bestellung 3738 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002K-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFETs 60V Vds 20V Vgs SOT-23 |
auf Bestellung 464170 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002K-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V |
auf Bestellung 332730 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002K-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - 2N7002K-T1-E3 - N CHANNEL MOSFET, 60V, 0.5A, SOT-23 tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 500mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: TO-236 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.5ohm directShipCharge: 25 |
auf Bestellung 15212 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002K-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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2N7002K-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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2N7002K-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD |
Produkt ist nicht verfügbar |