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2N7002KDW-AU_R1_000A1

2N7002KDW-AU_R1_000A1 Panjit International Inc.

2N7002KDW-AU.pdf
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.25A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.055 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2N7002KDW-AU_R1_000A1 Panjit International Inc.

Description: MOSFET 2N-CH 60V 0.25A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 Panjit International Inc. 2N7002KDW-AU.pdf Description: MOSFET 2N-CH 60V 0.25A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5664 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
105+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.066 EUR
Mindestbestellmenge: 67 Stücke
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2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 Panjit 4644333141354544323133313438364630423245323135423830373745343033.pdf MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
auf Bestellung 2803 Stücke:
Lieferzeit 10-14 Tag (e)
11+0.27 EUR
17+0.17 EUR
100+0.11 EUR
500+0.077 EUR
1000+0.069 EUR
3000+0.055 EUR
6000+0.049 EUR
Mindestbestellmenge: 11 Stücke
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2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
Mindestbestellmenge: 77 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 PanJit 2N7002KDW-AU.pdf 2N7002KDW-AU_R1_000A1
auf Bestellung 3087 Stücke:
Lieferzeit 14-21 Tag (e)
1082+0.14 EUR
1274+0.11 EUR
3000+0.081 EUR
Mindestbestellmenge: 1082 Stücke
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2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
2N7002KDW-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.25A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5664 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
105+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.066 EUR
Mindestbestellmenge: 67 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 4644333141354544323133313438364630423245323135423830373745343033.pdf
2N7002KDW-AU_R1_000A1
Hersteller: Panjit
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
auf Bestellung 2803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
11+0.27 EUR
17+0.17 EUR
100+0.11 EUR
500+0.077 EUR
1000+0.069 EUR
3000+0.055 EUR
6000+0.049 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
2N7002KDW-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Pulsed drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
77+0.93 EUR
Mindestbestellmenge: 77 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 2N7002KDW-AU.pdf
Hersteller: PanJit
2N7002KDW-AU_R1_000A1
auf Bestellung 3087 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1082+0.14 EUR
1274+0.11 EUR
3000+0.081 EUR
Mindestbestellmenge: 1082 Stücke
Im Einkaufswagen  Stück im Wert von  UAH