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2N7002KDW-AU_R1_000A1

2N7002KDW-AU_R1_000A1 Panjit International Inc.


2N7002KDW-AU.pdf Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.25A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.06 EUR
9000+0.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2N7002KDW-AU_R1_000A1 Panjit International Inc.

Description: MOSFET 2N-CH 60V 0.25A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 Hersteller : Panjit 2N7002KDW-AU-1869661.pdf MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
auf Bestellung 4698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.29 EUR
12+0.24 EUR
100+0.15 EUR
1000+0.10 EUR
3000+0.07 EUR
9000+0.06 EUR
24000+0.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 Hersteller : PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3101 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
228+0.31 EUR
371+0.19 EUR
585+0.12 EUR
709+0.10 EUR
1313+0.05 EUR
1389+0.05 EUR
6000+0.05 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 Hersteller : PanJit Semiconductor 2N7002KDW-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
auf Bestellung 3101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
371+0.19 EUR
585+0.12 EUR
709+0.10 EUR
1313+0.05 EUR
1389+0.05 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
2N7002KDW-AU_R1_000A1 2N7002KDW-AU_R1_000A1 Hersteller : Panjit International Inc. 2N7002KDW-AU.pdf Description: MOSFET 2N-CH 60V 0.25A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
67+0.26 EUR
107+0.17 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH