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Technische Details 2N7002KDW_R1_00001 PanJit
Description: MOSFET 2N-CH 60V 0.115A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote 2N7002KDW_R1_00001 nach Preis ab 0.039 EUR bis 0.25 EUR
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2N7002KDW_R1_00001 | Panjit International Inc. |
 Description: MOSFET 2N-CH 60V 0.115A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KDW_R1_00001 | Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
auf Bestellung 6127 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KDW_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 60V 0.115A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 4172 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002KDW_R1_00001 |
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Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.115A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 60V 0.115A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.046 EUR |
| 2N7002KDW_R1_00001 |
|
Hersteller: Panjit
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
auf Bestellung 6127 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 0.24 EUR |
| 20+ | 0.14 EUR |
| 100+ | 0.09 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.056 EUR |
| 3000+ | 0.046 EUR |
| 9000+ | 0.039 EUR |
| 2N7002KDW_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 60V 0.115A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 60V 0.115A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 4172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 124+ | 0.14 EUR |
| 200+ | 0.088 EUR |
| 500+ | 0.064 EUR |
| 1000+ | 0.056 EUR |