Technische Details 2N7002KQBZ Nexperia
Description: 2N7002KQB/SOT8015/DFN1110D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 720mA (Ta), Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V, Power Dissipation (Max): 420mW (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: DFN1110D-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002KQBZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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2N7002KQBZ | Nexperia USA Inc. |
 Description: 2N7002KQB/SOT8015/DFN1110D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 720mA (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V Power Dissipation (Max): 420mW (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: DFN1110D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N7002KQBZ | Nexperia USA Inc. |
Description: 2N7002KQB/SOT8015/DFN1110D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 720mA (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V Power Dissipation (Max): 420mW (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: DFN1110D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N7002KQBZ | Nexperia |
MOSFETs SOT8015 N-CH 60V .72A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N7002KQBZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 720mA Power dissipation: 0.42W Case: DFN1010D-3; SOT1215 Gate-source voltage: ±16V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 610pC Kind of package: reel; tape Kind of channel: enhancement Technology: Trench Pulsed drain current: 2.9A Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 2N7002KQBZ |
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Hersteller: Nexperia USA Inc.
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KQBZ |
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Hersteller: Nexperia USA Inc.
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KQBZ |
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Hersteller: Nexperia
MOSFETs SOT8015 N-CH 60V .72A
MOSFETs SOT8015 N-CH 60V .72A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002KQBZ |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 720mA
Power dissipation: 0.42W
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±16V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Trench
Pulsed drain current: 2.9A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 720mA; Idm: 2.9A; 420mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 720mA
Power dissipation: 0.42W
Case: DFN1010D-3; SOT1215
Gate-source voltage: ±16V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 610pC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: Trench
Pulsed drain current: 2.9A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH