2N7002KW-AU_R1_000A1 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.063 EUR |
| 6000+ | 0.056 EUR |
| 9000+ | 0.052 EUR |
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Technische Details 2N7002KW-AU_R1_000A1 Panjit International Inc.
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote 2N7002KW-AU_R1_000A1 nach Preis ab 0.046 EUR bis 0.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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2N7002KW-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1A Application: automotive industry |
auf Bestellung 3289 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002KW-AU_R1_000A1 | Panjit |
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
auf Bestellung 1213 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002KW-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002KW-AU_R1_000A1 | PanJit |
2N7002KW-AU_R1_000A1 |
auf Bestellung 3289 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002KW-AU_R1_000A1 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1A
Application: automotive industry
auf Bestellung 3289 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 379+ | 0.23 EUR |
| 697+ | 0.12 EUR |
| 1171+ | 0.073 EUR |
| 1425+ | 0.06 EUR |
| 3000+ | 0.046 EUR |
| 2N7002KW-AU_R1_000A1 |
|
Hersteller: Panjit
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
auf Bestellung 1213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 0.29 EUR |
| 19+ | 0.18 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.082 EUR |
| 1000+ | 0.071 EUR |
| 3000+ | 0.057 EUR |
| 6000+ | 0.05 EUR |
| 2N7002KW-AU_R1_000A1 |
|
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
Qualification: AEC-Q101
Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 0.31 EUR |
| 107+ | 0.2 EUR |
| 174+ | 0.12 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.077 EUR |
| 2N7002KW-AU_R1_000A1 |
|
Hersteller: PanJit
2N7002KW-AU_R1_000A1
2N7002KW-AU_R1_000A1
auf Bestellung 3289 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1777+ | 0.099 EUR |
| 3000+ | 0.075 EUR |