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2N7002KW_R1_00001

2N7002KW_R1_00001 Panjit International Inc.


2N7002KW.pdf Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.052 EUR
Mindestbestellmenge: 3000
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Technische Details 2N7002KW_R1_00001 Panjit International Inc.

Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V.

Weitere Produktangebote 2N7002KW_R1_00001 nach Preis ab 0.047 EUR bis 0.43 EUR

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2N7002KW_R1_00001 2N7002KW_R1_00001 Hersteller : Panjit International Inc. 2N7002KW.pdf Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
auf Bestellung 9542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
82+ 0.27 EUR
153+ 0.14 EUR
500+ 0.11 EUR
1000+ 0.079 EUR
Mindestbestellmenge: 59
2N7002KW_R1_00001 2N7002KW_R1_00001 Hersteller : Panjit 2N7002KW-1869453.pdf MOSFET 60V N-Channel Enhancement Mode MOSFET - ESD Protected
auf Bestellung 21738 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
120+0.43 EUR
177+ 0.29 EUR
393+ 0.13 EUR
1000+ 0.081 EUR
3000+ 0.068 EUR
24000+ 0.062 EUR
45000+ 0.047 EUR
Mindestbestellmenge: 120
2N7002KW-R1-00001 2N7002KW-R1-00001 Hersteller : Panjit 2N7002KW-1869453.pdf MOSFET SOT-323/MOS/SOT/NFET-035TA
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