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2N7002LDBZR Texas Instruments


Hersteller: Texas Instruments
Description: N-CHANNEL 5V ENHANCEMENT MODE FI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 64mA, 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 5V
Vgs (Max): 7V
Drain to Source Voltage (Vdss): 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 pC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5 pF @ 6 V
auf Bestellung 2725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
77+0.23 EUR
87+0.2 EUR
102+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2N7002LDBZR Texas Instruments

Description: N-CHANNEL 5V ENHANCEMENT MODE FI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 64mA, 5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 5V, Vgs (Max): 7V, Drain to Source Voltage (Vdss): 6 V, Gate Charge (Qg) (Max) @ Vgs: 34 pC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5 pF @ 6 V.

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2N7002LDBZR Hersteller : Texas Instruments Description: N-CHANNEL 5V ENHANCEMENT MODE FI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 64mA, 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 5V
Vgs (Max): 7V
Drain to Source Voltage (Vdss): 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 pC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5 pF @ 6 V
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2N7002LDBZR 2N7002LDBZR Hersteller : Texas Instruments MOSFETs N-channel 5V enhancement mode field effect transistors
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Im Einkaufswagen  Stück im Wert von  UAH