Produkte > NXP USA INC. > 2N7002PM,315
2N7002PM,315

2N7002PM,315 NXP USA Inc.


DiscreteSemiconductors.pdf Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 300MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Power Dissipation (Max): 250mW (Ta)
Supplier Device Package: DFN1006-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
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Technische Details 2N7002PM,315 NXP USA Inc.

Description: MOSFET N-CH 60V 300MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Power Dissipation (Max): 250mW (Ta), Supplier Device Package: DFN1006-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V.