2N7002PW DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; Idm: 1.2A; 0.26W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.26W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 926+ | 0.077 EUR |
| 1260+ | 0.057 EUR |
| 1413+ | 0.051 EUR |
| 1539+ | 0.046 EUR |
| 1684+ | 0.042 EUR |
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Technische Details 2N7002PW DIOTEC SEMICONDUCTOR
Description: MOSFET N-CH 60V 315MA SC-70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 315mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 260mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V.
Weitere Produktangebote 2N7002PW nach Preis ab 0.049 EUR bis 0.32 EUR
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2N7002PW | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, SOT-323, 60V, 0.315A, 150C, N |
auf Bestellung 6731 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002PW | Hersteller : Diotec Semiconductor |
Description: MOSFET N-CH 60V 315MA SC-70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 315mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V |
auf Bestellung 2977 Stücke: Lieferzeit 10-14 Tag (e) |
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