2N7002PW

2N7002PW Diotec Semiconductor


2n7002pw.pdf Hersteller: Diotec Semiconductor
MOSFET MOSFET, SOT-323, 60V, 0.315A, 150C, N
auf Bestellung 6414 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
94+0.56 EUR
129+ 0.41 EUR
154+ 0.34 EUR
500+ 0.27 EUR
1000+ 0.24 EUR
3000+ 0.18 EUR
9000+ 0.094 EUR
Mindestbestellmenge: 94
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Technische Details 2N7002PW Diotec Semiconductor

Description: MOSFET, SOT-323, 60V, 0.315A, 15, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 315mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 260mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V.

Weitere Produktangebote 2N7002PW

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2N7002PW Hersteller : Diotec Semiconductor 2n7002pw.pdf MOSFET, SOT-323, 60V, 0.315A, 150C, N
Produkt ist nicht verfügbar
2N7002PW Hersteller : DIOTEC SEMICONDUCTOR 2n7002pw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.26W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.26W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Produkt ist nicht verfügbar
2N7002PW 2N7002PW Hersteller : Diotec Semiconductor 2n7002pw.pdf Description: MOSFET, SOT-323, 60V, 0.315A, 15
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 315mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Produkt ist nicht verfügbar
2N7002PW 2N7002PW Hersteller : Diotec Semiconductor 2n7002pw.pdf Description: MOSFET, SOT-323, 60V, 0.315A, 15
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 315mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Produkt ist nicht verfügbar
2N7002PW Hersteller : DIOTEC SEMICONDUCTOR 2n7002pw.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.26W; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.31A
Pulsed drain current: 1.2A
Power dissipation: 0.26W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar