2N7002PW Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET, SOT-323, 60V, 0.315A, 15
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 315mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 260mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.06 EUR |
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Technische Details 2N7002PW Diotec Semiconductor
Description: MOSFET, SOT-323, 60V, 0.315A, 15, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 315mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 260mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V.
Weitere Produktangebote 2N7002PW nach Preis ab 0.04 EUR bis 0.28 EUR
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2N7002PW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.26W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1.2A Power dissipation: 0.26W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
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2N7002PW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 310mA; Idm: 1.2A; 0.26W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.31A Pulsed drain current: 1.2A Power dissipation: 0.26W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002PW | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, SOT-323, 60V, 0.315A, 150C, N |
auf Bestellung 6975 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002PW | Hersteller : Diotec Semiconductor |
Description: MOSFET, SOT-323, 60V, 0.315A, 15 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 315mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 260mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V |
auf Bestellung 5730 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2N7002PW | Hersteller : Diotec Semiconductor |
N-Channel Enhancement Mode FET |
auf Bestellung 2040 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2N7002PW | Hersteller : Diotec Semiconductor |
MOSFET, SOT-323, 60V, 0.315A, 150C, N |
Produkt ist nicht verfügbar |