Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SA1162-GR,LF
2SA1162-GR,LF

2SA1162-GR,LF Toshiba Semiconductor and Storage

2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.072 EUR
6000+ 0.068 EUR
9000+ 0.058 EUR
30000+ 0.054 EUR
Mindestbestellmenge: 3000
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Technische Details 2SA1162-GR,LF Toshiba Semiconductor and Storage

Description: TRANS PNP 50V 0.15A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW.

Weitere Produktangebote 2SA1162-GR,LF nach Preis ab 0.052 EUR bis 0.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SA1162-GR,LF 2SA1162-GR,LF Hersteller : Toshiba 2SA1162_datasheet_en_20211006-1150392.pdf Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
auf Bestellung 116279 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
127+0.41 EUR
166+ 0.31 EUR
400+ 0.13 EUR
1000+ 0.088 EUR
3000+ 0.068 EUR
9000+ 0.06 EUR
24000+ 0.052 EUR
Mindestbestellmenge: 127
2SA1162-GR,LF 2SA1162-GR,LF Hersteller : Toshiba Semiconductor and Storage 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 54583 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
Mindestbestellmenge: 63
2SA1162-GR,LF 2SA1162-GR,LF Hersteller : Toshiba 2sa1162_datasheet_en_20211006.pdf Trans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
2SA1162-GR,LF 2SA1162-GR,LF Hersteller : Toshiba 2sa1162_datasheet_en_20211006.pdf Trans GP BJT PNP 50V 0.15A 200mW 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
2SA1162-GR,LF 2SA1162-GR,LF Hersteller : Toshiba 2sa1162_datasheet_en_20211006.pdf Trans GP BJT PNP 50V 0.15A 200mW Automotive 3-Pin S-Mini T/R
Produkt ist nicht verfügbar