2SA1162-GR,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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Technische Details 2SA1162-GR,LF Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW.
Weitere Produktangebote 2SA1162-GR,LF nach Preis ab 0.039 EUR bis 0.26 EUR
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2SA1162-GR,LF | Toshiba |
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V |
auf Bestellung 19700 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1162-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
auf Bestellung 8423 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SA1162-GR,LF |
|
Hersteller: Toshiba
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V
auf Bestellung 19700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 0.24 EUR |
| 20+ | 0.15 EUR |
| 100+ | 0.092 EUR |
| 500+ | 0.065 EUR |
| 1000+ | 0.058 EUR |
| 3000+ | 0.044 EUR |
| 6000+ | 0.039 EUR |
| 2SA1162-GR,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 8423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 114+ | 0.15 EUR |
| 186+ | 0.095 EUR |
| 500+ | 0.069 EUR |
| 1000+ | 0.061 EUR |