2SA1162-GR,LXHF

2SA1162-GR,LXHF Toshiba Semiconductor and Storage


docget.jsp?did=19351&prodName=2SA1162 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
9000+0.09 EUR
15000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SA1162-GR,LXHF Toshiba Semiconductor and Storage

Description: TRANS PNP 50V 0.15A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: S-Mini, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Qualification: AEC-Q101.

Weitere Produktangebote 2SA1162-GR,LXHF nach Preis ab 0.10 EUR bis 0.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SA1162-GR,LXHF 2SA1162-GR,LXHF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 19681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
100+0.20 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
2SA1162-GR,LXHF 2SA1162-GR,LXHF Hersteller : Toshiba 2SA1162_datasheet_en_20211006-1150392.pdf Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini)
auf Bestellung 13109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.57 EUR
10+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.10 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH