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2SA1162-GR,LXHF

2SA1162-GR,LXHF Toshiba Semiconductor and Storage

2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
9000+ 0.092 EUR
Mindestbestellmenge: 3000
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Technische Details 2SA1162-GR,LXHF Toshiba Semiconductor and Storage

Description: TRANS PNP 50V 0.15A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote 2SA1162-GR,LXHF nach Preis ab 0.13 EUR bis 0.92 EUR

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2SA1162-GR,LXHF 2SA1162-GR,LXHF Hersteller : Toshiba Semiconductor and Storage 2SA1162_datasheet_en_20211006.pdf?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
41+ 0.43 EUR
100+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 29
2SA1162-GR,LXHF 2SA1162-GR,LXHF Hersteller : Toshiba 2SA1162_datasheet_en_20211006-1150392.pdf Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-346 (S-Mini)
auf Bestellung 13470 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.92 EUR
81+ 0.64 EUR
197+ 0.27 EUR
1000+ 0.2 EUR
3000+ 0.16 EUR
9000+ 0.15 EUR
24000+ 0.13 EUR
Mindestbestellmenge: 57