Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SA1163-GR,LF
2SA1163-GR,LF

2SA1163-GR,LF Toshiba Semiconductor and Storage

2SA1163_datasheet_en_20220302.pdf?did=19353&prodName=2SA1163 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.12 EUR
6000+ 0.11 EUR
9000+ 0.091 EUR
Mindestbestellmenge: 3000
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Technische Details 2SA1163-GR,LF Toshiba Semiconductor and Storage

Description: TRANS PNP 120V 0.1A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 150 mW.

Weitere Produktangebote 2SA1163-GR,LF nach Preis ab 0.086 EUR bis 0.7 EUR

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2SA1163-GR,LF 2SA1163-GR,LF Hersteller : Toshiba Semiconductor and Storage 2SA1163_datasheet_en_20220302.pdf?did=19353&prodName=2SA1163 Description: TRANS PNP 120V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 25086 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
38+0.7 EUR
55+ 0.48 EUR
111+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 38
2SA1163-GR,LF 2SA1163-GR,LF Hersteller : Toshiba 2SA1163_datasheet_en_20220302-1916313.pdf Bipolar Transistors - BJT 120V 100MA PNP TRANSISTOR
auf Bestellung 13729 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
75+0.7 EUR
108+ 0.48 EUR
264+ 0.2 EUR
1000+ 0.14 EUR
3000+ 0.11 EUR
9000+ 0.088 EUR
24000+ 0.086 EUR
Mindestbestellmenge: 75
2SA1163-GR,LF 2SA1163-GR,LF Hersteller : Toshiba 2sa1163_datasheet_en_20220302.pdf Trans GP BJT PNP 120V 0.1A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
Produkt ist nicht verfügbar
2SA1163-GR,LF 2SA1163-GR,LF Hersteller : Toshiba 2sa1163_datasheet_en_20220302.pdf Trans GP BJT PNP 120V 0.1A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
Produkt ist nicht verfügbar