Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SA1182-GR,LF
2SA1182-GR,LF

2SA1182-GR,LF Toshiba Semiconductor and Storage

2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182 Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.087 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SA1182-GR,LF Toshiba Semiconductor and Storage

Description: TRANS PNP 30V 0.5A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 150 mW.

Weitere Produktangebote 2SA1182-GR,LF nach Preis ab 0.091 EUR bis 0.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SA1182-GR,LF 2SA1182-GR,LF Hersteller : Toshiba Semiconductor and Storage 2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182 Description: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 8549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
2SA1182-GR,LF 2SA1182-GR,LF Hersteller : Toshiba 2SA1182_datasheet_en_20210625-1139991.pdf Bipolar Transistors - BJT PNP TRANSISTOR
auf Bestellung 6806 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
68+0.77 EUR
99+ 0.53 EUR
241+ 0.22 EUR
1000+ 0.15 EUR
3000+ 0.12 EUR
9000+ 0.099 EUR
24000+ 0.091 EUR
Mindestbestellmenge: 68