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2SA1182-Y,LF

2SA1182-Y,LF Toshiba

2SA1182_datasheet_en_20210625-1139991.pdf Hersteller: Toshiba
Bipolar Transistors - BJT Bias Resistor Built-in transistor
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Anzahl Preis ohne MwSt
68+0.77 EUR
95+ 0.55 EUR
151+ 0.35 EUR
1000+ 0.16 EUR
3000+ 0.13 EUR
9000+ 0.1 EUR
24000+ 0.096 EUR
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Technische Details 2SA1182-Y,LF Toshiba

Description: TRANS PNP 30V 0.5A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 150 mW.

Weitere Produktangebote 2SA1182-Y,LF

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2SA1182-Y,LF 2SA1182-Y,LF Hersteller : Toshiba Semiconductor and Storage 2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182 Description: TRANS PNP 30V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
2SA1182-Y,LF 2SA1182-Y,LF Hersteller : Toshiba Semiconductor and Storage 2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182 Description: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Produkt ist nicht verfügbar