2SA1208S-AE onsemi
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
auf Bestellung 91000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2049+ | 0.24 EUR |
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Technische Details 2SA1208S-AE onsemi
Description: 2SA1208 - PNP EPITAXIAL PLANAR S, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 70 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 900 mW.
Weitere Produktangebote 2SA1208S-AE nach Preis ab 0.24 EUR bis 0.24 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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2SA1208S-AE | Hersteller : Sanyo |
Description: 2SA1208 - PNP EPITAXIAL PLANAR S Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V Frequency - Transition: 150MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
auf Bestellung 65000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1208S-AE | Hersteller : ONSEMI |
Description: ONSEMI - 2SA1208S-AE - 2SA1208S-AE, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 65000 Stücke: Lieferzeit 14-21 Tag (e) |