Technische Details 2SA1216
- TRANSISTOR, PNP MT-200
- Transistor Polarity:PNP
- Collector-to-Emitter Breakdown Voltage:180V
- Typ Gain Bandwidth ft:40MHz
- Av Current Ic:17A
- Case Style:MT-200
- Current Ib:5A
- Current Ic hFE:8A
- Full Power Rating Temperature:25`C
- Max Current Ic:17A
- Max Current Ic Continuous a:17A
- Max Junction Temperature Tj:150`C
- Max Power Dissipation Ptot:200W
- Max Voltage Vce Sat:2V
- Min Hfe:30
- No. of Transistors:1
- Pulsed Current Icm:16A
- Transistor Type:Power General Purpose
- Voltage Vcbo:180V
Weitere Produktangebote 2SA1216
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2SA1216 | Hersteller : Sanken Electric USA Inc. |
![]() Packaging: Bulk Package / Case: 3-ESIP Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 800mA, 8A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8A, 4V Frequency - Transition: 40MHz Supplier Device Package: MT-200 Part Status: Obsolete Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 180 V Power - Max: 200 W |
Produkt ist nicht verfügbar |
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2SA1216 | Hersteller : SANKEN |
![]() Description: Transistor: PNP; bipolar; 180V; 17A; 200W; MT200 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 180V Collector current: 17A Power dissipation: 200W Mounting: THT Frequency: 40MHz Case: MT200 Kind of package: tube |
Produkt ist nicht verfügbar |