2SA1222-T-AZ Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 200mA, 1A
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 45MHz
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 628+ | 0.78 EUR |
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Technische Details 2SA1222-T-AZ Renesas Electronics Corporation
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: 3-SSIP, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 900mV @ 200mA, 1A, Current - Collector Cutoff (Max): 200nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V, Frequency - Transition: 45MHz, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 1 W.