2SA1253T-SPA-SY Sanyo
Hersteller: Sanyo
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-SPA
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2664+ | 0.18 EUR |
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Technische Details 2SA1253T-SPA-SY Sanyo
Description: PNP EPITAXIAL PLANAR SILICON, Packaging: Bulk, Part Status: Active, Package / Case: 3-SSIP, Mounting Type: Through Hole, Transistor Type: PNP, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: 3-SPA.