2SA1313-Y,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.089 EUR |
6000+ | 0.083 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA1313-Y,LF Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V, Frequency - Transition: 200MHz, Supplier Device Package: S-Mini, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.
Weitere Produktangebote 2SA1313-Y,LF nach Preis ab 0.096 EUR bis 0.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SA1313-Y,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.5A SMINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
auf Bestellung 9192 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1313-Y,LF | Hersteller : Toshiba | Bipolar Transistors - BJT S-MINI PLN TRANSIST Pd=200mW F=200MHz |
auf Bestellung 16435 Stücke: Lieferzeit 14-28 Tag (e) |
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2SA1313-Y,LF | Hersteller : Toshiba | Trans GP BJT PNP 50V 0.5A 200mW 3-Pin S-Mini T/R |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1313-Y,LF | Hersteller : Toshiba | Trans GP BJT PNP 50V 0.5A 200mW 3-Pin S-Mini T/R |
Produkt ist nicht verfügbar |
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2SA1313-Y,LF | Hersteller : Toshiba | Trans GP BJT PNP 50V 0.5A 200mW 3-Pin S-Mini T/R |
Produkt ist nicht verfügbar |