2SA1416S-TD-E ONSEMI
Hersteller: ONSEMICategory: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 123+ | 0.58 EUR |
| 262+ | 0.27 EUR |
| 277+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA1416S-TD-E ONSEMI
Description: TRANS PNP 100V 1A PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: PCP, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 500 mW.
Weitere Produktangebote 2SA1416S-TD-E nach Preis ab 0.19 EUR bis 1.28 EUR
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2SA1416S-TD-E | Hersteller : ON Semiconductor |
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 3467 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1416S-TD-E | Hersteller : ON Semiconductor |
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 3467 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1416S-TD-E | Hersteller : onsemi |
Description: TRANS PNP 100V 1A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1416S-TD-E | Hersteller : onsemi |
Bipolar Transistors - BJT BIP PNP 1A 100V |
auf Bestellung 1184 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1416S-TD-E | Hersteller : onsemi |
Description: TRANS PNP 100V 1A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 2289 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SA1416S-TD-E | Hersteller : ON Semiconductor |
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auf Bestellung 314 Stücke: Lieferzeit 21-28 Tag (e) |
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2SA1416S-TD-E | Hersteller : ON Semiconductor |
Trans GP BJT PNP 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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2SA1416S-TD-E | Hersteller : ON Semiconductor |
Trans GP BJT PNP 100V 1A 500mW 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |