2SA1587-GR,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.077 EUR |
| 6000+ | 0.069 EUR |
| 9000+ | 0.064 EUR |
| 15000+ | 0.06 EUR |
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Technische Details 2SA1587-GR,LF Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: SC-70, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 100 mW.
Weitere Produktangebote 2SA1587-GR,LF nach Preis ab 0.069 EUR bis 0.38 EUR
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2SA1587-GR,LF | Toshiba |
Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1587-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC-70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
auf Bestellung 17936 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SA1587-GR,LF |
|
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.38 EUR |
| 15+ | 0.24 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.094 EUR |
| 3000+ | 0.075 EUR |
| 6000+ | 0.069 EUR |
| 2SA1587-GR,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 17936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 89+ | 0.24 EUR |
| 144+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.094 EUR |