Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SA1587-GR,LF
2SA1587-GR,LF

2SA1587-GR,LF Toshiba Semiconductor and Storage

docget.jsp?did=19172&prodName=2SA1587
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.065 EUR
6000+0.058 EUR
9000+0.054 EUR
15000+0.05 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SA1587-GR,LF Toshiba Semiconductor and Storage

Description: TRANS PNP 120V 0.1A SC-70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 125°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 100MHz, Supplier Device Package: SC-70, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 100 mW.

Weitere Produktangebote 2SA1587-GR,LF nach Preis ab 0.053 EUR bis 0.32 EUR

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2SA1587-GR,LF 2SA1587-GR,LF Toshiba 7954CBFDF9BAA1357D02AD310096FD8AA4ABF8088D84564B990CEC48BBC405F0.pdf Bipolar Transistors - BJT Transistor for Low Freq. Amplification
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.3 EUR
16+0.19 EUR
100+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
3000+0.06 EUR
6000+0.053 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1587-GR,LF 2SA1587-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19172&prodName=2SA1587 Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 17936 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
89+0.2 EUR
144+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1587-GR,LF 7954CBFDF9BAA1357D02AD310096FD8AA4ABF8088D84564B990CEC48BBC405F0.pdf
2SA1587-GR,LF
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+0.3 EUR
16+0.19 EUR
100+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
3000+0.06 EUR
6000+0.053 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1587-GR,LF docget.jsp?did=19172&prodName=2SA1587
2SA1587-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 17936 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
56+0.32 EUR
89+0.2 EUR
144+0.12 EUR
500+0.089 EUR
1000+0.079 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH