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2SA1721OTE85LF

2SA1721OTE85LF Toshiba

2SA1721_datasheet_en_20140301-1090384.pdf Hersteller: Toshiba
Bipolar Transistors - BJT NSM PLN TRANSIST Pd=150mW F=1MHz
auf Bestellung 3005 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
64+ 0.81 EUR
100+ 0.56 EUR
1000+ 0.31 EUR
3000+ 0.27 EUR
9000+ 0.23 EUR
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Technische Details 2SA1721OTE85LF Toshiba

Description: TRANS PNP 300V 0.1A SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V, Frequency - Transition: 50MHz, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 150 mW.

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2SA1721OTE85LF 2SA1721OTE85LF Hersteller : Toshiba Semiconductor and Storage 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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