2SA1721OTE85LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
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Technische Details 2SA1721OTE85LF Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V, Frequency - Transition: 50MHz, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 150 mW.
Weitere Produktangebote 2SA1721OTE85LF nach Preis ab 0.2 EUR bis 1.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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2SA1721OTE85LF | Toshiba |
Bipolar Transistors - BJT NSM PLN TRANSIST Pd=150mW F=1MHz |
auf Bestellung 5501 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1721OTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 300V 0.1A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Frequency - Transition: 50MHz Supplier Device Package: S-Mini Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 150 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 2SA1721OTE85LF |
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Hersteller: Toshiba
Bipolar Transistors - BJT NSM PLN TRANSIST Pd=150mW F=1MHz
Bipolar Transistors - BJT NSM PLN TRANSIST Pd=150mW F=1MHz
auf Bestellung 5501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.01 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 2SA1721OTE85LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 32+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |


