2SA1721OTE85LF Toshiba Semiconductor and Storage


2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details 2SA1721OTE85LF Toshiba Semiconductor and Storage

Description: TRANS PNP 300V 0.1A S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V, Frequency - Transition: 50MHz, Supplier Device Package: S-Mini, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 150 mW.

Weitere Produktangebote 2SA1721OTE85LF nach Preis ab 0.2 EUR bis 1.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
2SA1721OTE85LF 2SA1721OTE85LF Toshiba 4143333931424432394139373241313444454537413933344138334130374332.pdf Bipolar Transistors - BJT NSM PLN TRANSIST Pd=150mW F=1MHz
auf Bestellung 5501 Stücke:
Lieferzeit 10-14 Tag (e)
4+1.01 EUR
10+0.62 EUR
100+0.42 EUR
500+0.3 EUR
1000+0.26 EUR
3000+0.21 EUR
6000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1721OTE85LF 2SA1721OTE85LF Toshiba Semiconductor and Storage 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721 Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1721OTE85LF 4143333931424432394139373241313444454537413933344138334130374332.pdf
Hersteller: Toshiba
Bipolar Transistors - BJT NSM PLN TRANSIST Pd=150mW F=1MHz
auf Bestellung 5501 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1.01 EUR
10+0.62 EUR
100+0.42 EUR
500+0.3 EUR
1000+0.26 EUR
3000+0.21 EUR
6000+0.2 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2SA1721OTE85LF 2SA1721_datasheet_en_20140301.pdf?did=19183&prodName=2SA1721
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 300V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
32+0.65 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH