2SA1869-Y(JKT,Q,M) Toshiba Semiconductor and Storage

Description: TRANS PNP 50V 3A TO220NIS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-220NIS, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 10 W.