Technische Details 2SA1930(Q,M) Toshiba
Description: TRANS PNP 180V 2A TO220NIS, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 200MHz, Supplier Device Package: TO-220NIS, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 180 V, Power - Max: 2 W.
Weitere Produktangebote 2SA1930(Q,M)
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2SA1930(Q,M) | Hersteller : Toshiba Semiconductor and Storage |
 Description: TRANS PNP 180V 2A TO220NISPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-220NIS Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 180 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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2SA1930(Q,M) | Hersteller : Toshiba |
Bipolar Transistors - BJT PNP 180V 2A Transistor |
Produkt ist nicht verfügbar |
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| 2SA1930 (Q,M) | Hersteller : onsemi / Fairchild | Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |