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2SA1931,BOSCHQ(J

2SA1931,BOSCHQ(J Toshiba Semiconductor and Storage

2SA1931.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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Technische Details 2SA1931,BOSCHQ(J Toshiba Semiconductor and Storage

Description: TRANS PNP 50V 5A TO-220NIS, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 5 A, Supplier Device Package: TO-220NIS, Frequency - Transition: 60MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.