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2SA1962-O(Q)

2SA1962-O(Q) Toshiba

4322sa1962_datasheet_en_20131101.pdf.pdf Hersteller: Toshiba
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PN
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Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+2.93 EUR
56+ 2.72 EUR
100+ 2.53 EUR
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Technische Details 2SA1962-O(Q) Toshiba

Description: TRANS PNP 230V 15A TO3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A, Current - Collector Cutoff (Max): 5µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-3P(N), Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 230 V, Power - Max: 130 W.

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2SA1962-O(Q) 2SA1962-O(Q) Hersteller : Toshiba Semiconductor and Storage 2SA1962_datasheet_en_20131101.pdf?did=20429&prodName=2SA1962 Description: TRANS PNP 230V 15A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 130 W
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