2SA1971(TE12L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: TRANS PNP 400V 0.5A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 35MHz
Supplier Device Package: PW-MINI
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA1971(TE12L,F) Toshiba Semiconductor and Storage
Description: TRANS PNP 400V 0.5A PW-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V, Frequency - Transition: 35MHz, Supplier Device Package: PW-MINI, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 500 mW.
Weitere Produktangebote 2SA1971(TE12L,F) nach Preis ab 0.32 EUR bis 1.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SA1971(TE12L,F) | Hersteller : Toshiba |
Trans GP BJT PNP 400V 0.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
2SA1971(TE12L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PNP 400V 0.5A PW-MINI Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Frequency - Transition: 35MHz Supplier Device Package: PW-MINI Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 500 mW |
auf Bestellung 1025 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
2SA1971(TE12L,F) | Hersteller : Toshiba |
Bipolar Transistors - BJT Pb-FREE POWER TRANSISTOR PW-MINI IC=-0.5A V=-400 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
2SA1971(TE12L,F) | Hersteller : Toshiba |
Trans GP BJT PNP 400V 0.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
2SA1971(TE12L,F) | Hersteller : Toshiba |
Trans GP BJT PNP 400V 0.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
2SA1971(TE12L,F) | Hersteller : Toshiba |
Trans GP BJT PNP 400V 0.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R |
Produkt ist nicht verfügbar |