2SA2061(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER TRANSISTOR TSM MOQ=30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Description: PB-F POWER TRANSISTOR TSM MOQ=30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: TSM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.21 EUR |
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Produktbewertung abgeben
Technische Details 2SA2061(TE85L,F) Toshiba Semiconductor and Storage
Description: PB-F POWER TRANSISTOR TSM MOQ=30, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Supplier Device Package: TSM, Part Status: Active, Current - Collector (Ic) (Max): 2.5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 625 mW.
Weitere Produktangebote 2SA2061(TE85L,F) nach Preis ab 0.15 EUR bis 1.19 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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2SA2061(TE85L,F) | Hersteller : Toshiba | Trans GP BJT PNP 20V 2.5A 625mW 3-Pin TSM T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA2061(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER TRANSISTOR TSM MOQ=30 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Supplier Device Package: TSM Part Status: Active Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 625 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2061(TE85L,F) | Hersteller : Toshiba | Bipolar Transistors - BJT Pb-F POWER TRANSISTOR TSM PD=1W F=1MHZ |
auf Bestellung 4165 Stücke: Lieferzeit 14-28 Tag (e) |
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2SA2061(TE85L,F) | Hersteller : Toshiba | Trans GP BJT PNP 20V 2.5A 625mW 3-Pin TSM T/R |
Produkt ist nicht verfügbar |
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2SA2061(TE85L,F) | Hersteller : Toshiba | Trans GP BJT PNP 20V 2.5A 625mW 3-Pin TSM T/R |
Produkt ist nicht verfügbar |