2SA2097(TE16L1,NQ) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 5A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.5 EUR |
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Technische Details 2SA2097(TE16L1,NQ) Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A PW-MOLD, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Supplier Device Package: PW-MOLD, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2SA2097(TE16L1,NQ) nach Preis ab 0.4 EUR bis 1.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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2SA2097(TE16L1,NQ) | Hersteller : Toshiba | Trans GP BJT PNP 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R |
auf Bestellung 3065 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA2097(TE16L1,NQ) | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 5A PW-MOLD Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Supplier Device Package: PW-MOLD Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
auf Bestellung 2085 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA2097(TE16L1,NQ) | Hersteller : Toshiba | Bipolar Transistors - BJT Pb-F POWER TRANSISTOR; PW-MOLD; PC=1W; F=100KHZ |
auf Bestellung 2000 Stücke: Lieferzeit 188-202 Tag (e) |
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2SA2097(TE16L1,NQ) | Hersteller : Toshiba | Trans GP BJT PNP 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R |
Produkt ist nicht verfügbar |
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2SA2097(TE16L1,NQ) | Hersteller : Toshiba | Trans GP BJT PNP 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R |
Produkt ist nicht verfügbar |
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2SA2097(TE16L1,NQ) | Hersteller : Toshiba | Trans GP BJT PNP 50V 5A 1000mW 3-Pin(2+Tab) New PW-Mold T/R |
Produkt ist nicht verfügbar |