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2SA2154CT-GR,L3F

2SA2154CT-GR,L3F Toshiba Semiconductor and Storage

docget.jsp?did=711&prodName=2SA2154CT Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.1A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.065 EUR
Mindestbestellmenge: 10000
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Technische Details 2SA2154CT-GR,L3F Toshiba Semiconductor and Storage

Description: TRANS PNP 50V 0.1A CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: CST3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 100 mW.

Weitere Produktangebote 2SA2154CT-GR,L3F nach Preis ab 0.06 EUR bis 0.39 EUR

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2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Hersteller : Toshiba 2SA2154CT_datasheet_en_20221125-1916566.pdf Bipolar Transistors - BJT Transistor for Low Freq. Amplification
auf Bestellung 39570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.39 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.086 EUR
5000+0.074 EUR
10000+0.06 EUR
Mindestbestellmenge: 8
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2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=711&prodName=2SA2154CT Description: TRANS PNP 50V 0.1A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: CST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 17750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
74+0.24 EUR
119+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
2000+0.086 EUR
5000+0.074 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
2SA2154CT-GR,L3F 2SA2154CT-GR,L3F Hersteller : Toshiba docget.pdf Transistor Silicon PNP Epitaxial Type (PCT process)
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