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2SA2154MFVGR,L3F

2SA2154MFVGR,L3F Toshiba

2SA2154MFV_datasheet_en_20140301-1916552.pdf Hersteller: Toshiba
Bipolar Transistors - BJT TRANSISTOR 50V
auf Bestellung 3660 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
120+0.43 EUR
171+ 0.3 EUR
378+ 0.14 EUR
1000+ 0.081 EUR
2500+ 0.073 EUR
8000+ 0.055 EUR
48000+ 0.047 EUR
Mindestbestellmenge: 120
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Technische Details 2SA2154MFVGR,L3F Toshiba

Description: TRANS PNP 50V 0.15A VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Frequency - Transition: 80MHz, Supplier Device Package: VESM, Current - Collector (Ic) (Max): 150 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW.

Weitere Produktangebote 2SA2154MFVGR,L3F nach Preis ab 0.078 EUR bis 0.47 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SA2154MFVGR,L3F 2SA2154MFVGR,L3F Hersteller : Toshiba Semiconductor and Storage Description: TRANS PNP 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 7950 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
81+ 0.32 EUR
150+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
2000+ 0.078 EUR
Mindestbestellmenge: 56
2SA2154MFVGR,L3F 2SA2154MFVGR,L3F Hersteller : Toshiba Semiconductor and Storage Description: TRANS PNP 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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