2SA812B-T1B-AT Renesas
Hersteller: RenesasDescription: 2SA812B-T1B-AT - PNP SILICON EPI
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: 3-MINIMOLD
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 201000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4121+ | 0.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA812B-T1B-AT Renesas
Description: 2SA812B-T1B-AT - PNP SILICON EPI, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 6V, Frequency - Transition: 180MHz, Supplier Device Package: 3-MINIMOLD, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW.
Weitere Produktangebote 2SA812B-T1B-AT nach Preis ab 0.11 EUR bis 0.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| 2SA812B-T1B-AT | Hersteller : Renesas |
2SA812B-T1B-AT |
auf Bestellung 201000 Stücke: Lieferzeit 14-21 Tag (e) |
|