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2SB1188T100P ROHM Semiconductor

rohm_semiconductor_rohms10503-1-1742597.pdf Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT DVR PNP 32V 2A
auf Bestellung 287 Stücke:
Lieferzeit 14-28 Tag (e)
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35+1.52 EUR
40+ 1.3 EUR
100+ 0.97 EUR
500+ 0.76 EUR
1000+ 0.57 EUR
2000+ 0.48 EUR
10000+ 0.45 EUR
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Technische Details 2SB1188T100P ROHM Semiconductor

Description: TRANS PNP 32V 2A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 2 W.

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2SB1188 T100P Hersteller : ROHM SOT89
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2SB1188T100P 2SB1188T100P Hersteller : Rohm Semiconductor 2SB1182,1188,1240.pdf Description: TRANS PNP 32V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: MPT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 2 W
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