2SB1202S-E onsemi
Hersteller: onsemi
Description: TRANS PNP 50V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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Technische Details 2SB1202S-E onsemi
Description: TRANS PNP 50V 3A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2SB1202S-E
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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2SB1202S-E | onsemi |
Bipolar Transistors - BJT BIP PNP 3A 50V |
auf Bestellung 1217 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SB1202S-E |
|
Hersteller: onsemi
Bipolar Transistors - BJT BIP PNP 3A 50V
Bipolar Transistors - BJT BIP PNP 3A 50V
auf Bestellung 1217 Stücke:
Lieferzeit 10-14 Tag (e)