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2SB1215S-E

2SB1215S-E onsemi


en2539-d.pdf Hersteller: onsemi
Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
auf Bestellung 1175 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
684+0.72 EUR
Mindestbestellmenge: 684
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Technische Details 2SB1215S-E onsemi

Description: TRANS PNP 100V 3A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V, Frequency - Transition: 130MHz, Supplier Device Package: TP, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1 W.

Weitere Produktangebote 2SB1215S-E nach Preis ab 0.69 EUR bis 1.7 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
2SB1215S-E 2SB1215S-E Hersteller : onsemi EN2539_D-1803890.pdf Bipolar Transistors - BJT BIP PNP 3A 100V
auf Bestellung 1000 Stücke:
Lieferzeit 129-133 Tag (e)
Anzahl Preis ohne MwSt
2+1.7 EUR
10+ 1.53 EUR
100+ 1.19 EUR
500+ 0.98 EUR
1000+ 0.76 EUR
3000+ 0.71 EUR
6000+ 0.69 EUR
Mindestbestellmenge: 2
2SB1215S-E 2SB1215S-E Hersteller : ON Semiconductor 76en2539-d.pdf Trans GP BJT PNP 100V 3A 1000mW 3-Pin(3+Tab) TP Bag
Produkt ist nicht verfügbar
2SB1215S-E 2SB1215S-E Hersteller : onsemi en2539-d.pdf Description: TRANS PNP 100V 3A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Produkt ist nicht verfügbar