2SB1260T100R Rohm Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.33 EUR |
| 2000+ | 0.28 EUR |
| 3000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SB1260T100R Rohm Semiconductor
Description: TRANS PNP 80V 1A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V, Frequency - Transition: 100MHz, Supplier Device Package: MPT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote 2SB1260T100R nach Preis ab 0.26 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SB1260T100R | Hersteller : Rohm Semiconductor |
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
2SB1260T100R | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 80V 1A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Frequency - Transition: 100MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
2SB1260T100R | Hersteller : Rohm Semiconductor |
Description: TRANS PNP 80V 1A MPT3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V Frequency - Transition: 100MHz Supplier Device Package: MPT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 4289 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| 2SB1260 T100R | Hersteller : ROHM | SOT89 |
auf Bestellung 236 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
| 2SB1260T100R | Hersteller : ROHM | SOT-89 |
auf Bestellung 8150 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
| 2SB1260T100R | Hersteller : ROHM Semiconductor |
Bipolar Transistors - BJT PNP 80V 1A |
Produkt ist nicht verfügbar |

