Produkte > ROHM SEMICONDUCTOR > 2SB1260T100Q
2SB1260T100Q

2SB1260T100Q Rohm Semiconductor


5281269815057512sb1260.pdf
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 1A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 616 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.78 EUR
100+0.5 EUR
500+0.38 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 2SB1260T100Q Rohm Semiconductor

Description: TRANS PNP 80V 1A MPT3, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Not For New Designs, Supplier Device Package: MPT3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).

Weitere Produktangebote 2SB1260T100Q

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
2SB1260T100Q Hersteller : ROHM 5281269815057512sb1260.pdf
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
2SB1260T100Q 2SB1260T100Q Hersteller : Rohm Semiconductor 5281269815057512sb1260.pdf Description: TRANS PNP 80V 1A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SB1260T100Q Hersteller : ROHM Semiconductor rohms32747-1.pdf Bipolar Transistors - BJT PNP 80V 1A SO-89
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH