2SB1260T100Q Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 336+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
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Technische Details 2SB1260T100Q Rohm Semiconductor
Description: TRANS PNP 80V 1A MPT3, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Not For New Designs, Supplier Device Package: MPT3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote 2SB1260T100Q nach Preis ab 0.45 EUR bis 1.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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2SB1260T100Q | Rohm Semiconductor |
 Description: TRANS PNP 80V 1A MPT3Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Not For New Designs Supplier Device Package: MPT3 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
auf Bestellung 616 Stücke: Lieferzeit 10-14 Tag (e) |
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2SB1260T100Q | Rohm Semiconductor |
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) MPT T/R |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 21 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| 2SB1260T100Q | ROHM |
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auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 2SB1260T100Q |
|
Hersteller: Rohm Semiconductor
Description: TRANS PNP 80V 1A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 80V 1A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 23+ | 0.93 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| 2SB1260T100Q |
|
Hersteller: Rohm Semiconductor
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) MPT T/R
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) MPT T/R
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| 2SB1260T100Q |
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Hersteller: ROHM
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)