Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > 2SB1457,T6TOTOF(J
2SB1457,T6TOTOF(J

2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage

2SB1457_2009-12-21.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 100V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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Technische Details 2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage

Description: TRANS PNP 100V 2A TO92MOD, Power - Max: 900 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: TO-92MOD, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body, Packaging: Bulk.