2SB601-AZ Renesas
Hersteller: RenesasDescription: 2SB601 - PNP SILICON EPITAXIAL T
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 201+ | 2.47 EUR |
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Technische Details 2SB601-AZ Renesas
Description: 2SB601 - PNP SILICON EPITAXIAL T, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V, Supplier Device Package: TO-220AB, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.5 W.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2SB601-AZ | Hersteller : Renesas Electronics |
Renesas Electronics |
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