2SB647CTZ-E Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: TRANS PNP 80V 1A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92MOD
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 900 mW
auf Bestellung 3427 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 392+ | 1.19 EUR |
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Technische Details 2SB647CTZ-E Renesas Electronics Corporation
Description: TRANS PNP 80V 1A TO-92MOD, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V, Frequency - Transition: 140MHz, Supplier Device Package: TO-92MOD, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 900 mW.
Weitere Produktangebote 2SB647CTZ-E nach Preis ab 1.05 EUR bis 1.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 2SB647CTZ-E | Hersteller : Renesas |
2SB647CTZ-E |
auf Bestellung 3427 Stücke: Lieferzeit 14-21 Tag (e) |
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